Semiconductor Engineering

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Electronics Weekly

ISSCC: Novel gate drive improves GaN power transistor switching

GaN power transistors can shrink AC‑DC power supplies and cut losses but, to get the best out of them, their gate drive waveform needs careful attention. As a German team pointed out at ISSCC, GaN ...
Electronic Design

Surrounding Gate Transistors May Improve DRAM

DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...
Physics World

Negative capacitance could make transistors more energy efficient

Energy saving: artist’s impression of the gate material with negative capacitance. (Courtesy: Ella Maru Studio) By exploiting a curious effect called negative capacitance, researchers have designed a ...
NextBigFuture

Major breakthrough in transistor size by creating gate only 1 nanometer long

For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5-nanometer ...
Electronics Weekly

ISSCC: GaN power chip integrates control

A monolithic GaN mains power converter IC was the target of Leibniz University Hannover, which worked with Texas Instruments. And the result is a 15W off-line PSU that can feed a 30-60V LED string ...