GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN) — a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products — announced ...
GaN based HEMTs (high electron mobility transistors) offer efficiency, density and cost advantages compared with silicon based devices. These features should result in widespread adoption of GaN ...
As demand for new automotive battery electric vehicles (BEVs) heats up, automakers are looking for solutions to meet strict zero-defect goals in power semiconductors. Gallium nitride (GaN) and silicon ...
EPC launches EPC2367, a 100 V GaN FET with ultra-low on-resistance EPC launches EPC2367, a 100 V GaN FET with ultra-low 1.2 mΩ RDS(on), superior efficiency, and thermal performance, advancing AI, ...
GaN Pioneer Exploring Next Generation Power Conversion Where One Transphorm FQS Can Replace Multiple Silicon Devices Transphorm will prototype the FQS platform using its 650 V GaN technology that ...
Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...
New platform for semiconductor inspection and metrology developed through joint research by Photo electron Soul and Nagoya University begins validation at KIOXIA Iwate NAGOYA, Japan — In late ...
The increasing need for higher power density and improved cooling on military and aerospace platforms is pushing silicon-based power electronics systems to their operational limits. Wide-bandgap (WBG) ...
The great need for higher power density and improved cooling in military and aerospace systems are now being met by the Wide-bandgap (WBG) semiconductor materials of Silicon Carbide (SiC) and Gallum ...
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