A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...
We’ve all struggled with gate drive circuits. I’ve spent months in the lab trying to get textbook drive waveforms with the first Superjunction devices that were on the market. I couldn’t get enough ...
Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high icnput impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input ...
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