In this paper which won the best paper award at GAAS 2001, a novel predistortion approach well suited for MMIC design is discussed. The theoretical analysis shows third-order intermodulation product ...

The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs is described. The amplifier was designed with highly integrated distributed line-based low-loss power, combining design techniques ...

The UPG GaAs MMIC power amplifier packs a pre-driver, driver and output stage in a single, 4-mm square 20-pin leadless package. Primarily intended for 915 MHz and 2.4 GHz ISM-band applications, the ...

In this white paper, a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) power amplifier (PA) design approach is examined from a systems perspective. It highlights the ...

Macom’s MAAP-011027 2-stage, 8 W saturated C-band power amplifier operates between the 5.2 – 5.9 GHz frequency band with 37% power added efficiency. Packaged in a lead-free 5 mm 20-lead PQFN, the ...

DURHAM, N.C.--(BUSINESS WIRE)--Providing RF design engineers with the largest commercially available family of wide bandgap MMIC products, Cree, Inc. (Nasdaq: CREE) has developed five new GaN HEMT ...

BIEL, Switzerland & FREMONT, Calif.--(BUSINESS WIRE)-- MwT, a division of IXYS Corporation (NAS: IXYS) , introduces two high performance and high efficiency GaAs/AlGaAs pHEMT-based Monolithic ...

MD&M West unites five powerful industry sectors—MedTech, Automation, Design & Manufacturing, Plastics, and Packaging—creating the West Coast's most comprehensive manufacturing event.

A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corporation (NOC) has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit ...

LOWELL, Mass.--(BUSINESS WIRE)--MACOM Technology Solutions Inc. (“MACOM”) today announced its new MAGM series of GaN-on-Si-based MMIC power amplifiers (“PAs") optimized for massive MIMO antenna ...