Phys.org

New method realize ohmic contacts in n-type MoS₂ transistors at cryogenic temperatures

Semiconducting transition metal dichalcogenides (TMDs) are a class of layered materials exhibiting unique optoelectronic properties that could be leveraged to develop transistors, sensors and other ...
Nature

Design, synthesis and simulation of fractional-order element using MOS transistors as distributed resistive capacitive devices

The article presents a synthesis method to design electrical circuit elements with fractional-order impedance, referred to as a Fractional-Order Element (FOE) or Fractor, that can be implemented by ...
Semiconductor Engineering

Vertical MoS2 transistors with sub-1-nm gate lengths

Side-wall MoS 2 transistors with an atomically thin channel and a physical gate length of sub-1 nm using the edge of a graphene layer as the gate electrode Find the technical paper link here.
Semiconductor Engineering

Effects of Size Scaling and Device Architecture on the Radiation Response of Nanoscale MOS Transistors

A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work ...