New series leverages advanced Smart STripFET F8 power technology for best static performance and smaller die size ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) expands its PowerDI8080-5 automotive-compliant* N-channel MOSFET portfolio with the introduction of an industry-leading, ultra-low RDS(ON), 100V MOSFET.

Nexperia has created a mosfet for automotive airbags, the n-channel 60V 40A 13mΩ(max) BUK9M20-60EL. The logic-level device comes in 3.3 x 3.3mm SOT1210 ‘LFPAK33’ packaging and has “enhanced ...

Alpha and Omega Semiconductor has announced the release of the AEC-Q101 qualified 1200V silicon carbide (SiC) aSiC MOSFETs in an optimised TO-247-4L package. Intended for high efficiency and ...

DUBLIN--(BUSINESS WIRE)--The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering. The global market for IGBT and Super ...

Given the maturity of MOSFETs, selecting one for your next design may seem deceptively simple. Engineers are familiar with the figures of merit on a MOSFET data sheet. Selecting a MOSFET requires the ...

Power MOSFET’s development was partly driven by the limitations of bipolar junction transistors (BJTs). Today, this device has been the choice in power electronics applications. In this application ...

International Rectifier’s IRF7835PbF and IRF7836PbF are 30-V synchronous buck HEXFET MOSFETs intended for dc-dc synchronous point-of-load (POL) converters. The SO-8 MOSFETs are well suited for systems ...

Vishay Intertechnology, Inc. released two new devices in its industry-first family of power MOSFETs built on an enhanced process flow with strict manufacturing process controls for implantable medical ...

DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...