This figure depicts the synthesis of metallic 1D mirror twin boundaries through Van der Waals epitaxial growth (top) and the large-area 2D semiconductor integrated circuit constructed based on these ...

A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...

The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...

Researchers unveil a roadmap for 2D transistor gate stack design, marking a key step toward ultra-efficient chips that could replace silicon technology. For decades, silicon-based CMOS technology has ...

This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...

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The fun part about logic gates is that there are so many ways to make them, with each approach having its own advantages and disadvantages. Although these days transistor-transistor logic (TTL) is the ...

Advances in materials and architecture could lead to silicon-free chip manufacturing thanks to a new type of transistor. When you purchase through links on our site, we may earn an affiliate ...

In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...

Pat gelsinger, boss of Intel, a chipmaker, loves to brag that his firm is leading the charge in semiconductor technology by entering the “angstrom era”. The angstrom, named in honour of Anders Jonas ...