Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
The MRF6VP3450H 50-V laterally diffused MOS (LDMOS) RF power transistor is offered as providing 50% higher output power than competing UHF TV broadcast solutions and demonstrates an industry-leading ...
Wireless base station power amplifier manufacturers, including 2G, 2.5G and 3G OEMs, represent the primary market targeted by a new family of power transistors that is said to deliver about a 10% ...
The importance of modeling in semiconductor design. Samsung Foundry opts for Keysight’s IC-CAP Model Generator to accelerate the creation of circuit libraries. Modern manufacturing is becoming more ...
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