WREG

Applied Materials Breakthrough in Electron Beam Imaging Technology Accelerates Development of the World’s Most Advanced Computer Chips

Applied’s new “cold field emission” technology works at room temperature, increasing nanoscale image resolution by up to 50% and imaging speed by up to 10X CFE eBeam technology enables leading ...
Enid News & Eagle

GaN-based e-Beam Inspection and Metrology Co-developed by Startup Photo electron Soul Inc. and Nagoya University Will be Evaluated by Kioxia, a Leading Flash Memory Producer

It was announced today that GaN (Gallium Nitride)-based e-Beam inspection and metrology for advanced semiconductor manufacturing, jointly developed by Nagoya University startup Photo electron Soul Inc ...
Semiconductor Engineering

Full Wafer Inspection for Voltage Contrast Systematic Defects Using High-Throughput Point Scan

Abstract: A next generation system and methodology for high-throughput e-beam hot spot inspection is described. Rather than capturing images of each hot spot, just a single pixel centered on the ...
Semiconductor Engineering

Modulated Electron Microscopy Applied In The Process Monitoring Of Memory Cell And The Defect Inspection Of Floating Circuits

A technical paper titled “In situ electrical property quantification of memory devices by modulated electron microscopy” was published by researchers at Hitachi High-Tech Corporation, KIOXIA ...