IXYS Corp has introduced a high performance family of GaAs based Power PHEMT (Pseudomorphic High Electron Mobility Transistors). The “PH” series of power PHEMT (AlGaAs/InGaAs) devices, MwT-PH-7, PH-15 ...
This white paper presents the development of E-pHEMT technology. E-pHEMT (Enhancement mode High-Electron-Mobility-Transistor) is a semiconductor process which is optimized for wireless applications.
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